2sk2022-01m n-channel mos-fet fap-iia series 500v 1,6w 5a 40w > features > outline drawing - high speed switching - low on-resistance - no secondary breakdown - low driving power - high voltage - v gs = 30v guarantee - avalanche proof > applications - switching regulators - ups - dc-dc converters - general purpose power amplifier > maximum ratings and characteristics > equivalent circuit - absolute maximum ratings (t c =25c), unless otherwise specified item symbol rating unit drain-source-voltage v ds 500 v drain-gate-voltage(r gs =20k w ) v dgr 500 v continous drain current i d 5 a pulsed drain current i d(puls) 20 a gate-source-voltage v gs 30 v max. power dissipation p d 40 w operating and storage temperature range t ch 150 c t stg -55 ~ +150 c - electrical characteristics (t c =25c), unless otherwise specified item symbol test conditions min. typ. max. unit drain-source breakdown-voltage v (br)dss i d =1ma v gs =0v 500 v gate threshhold voltage v gs(th) i d =1m a v ds= v gs 2,5 3,0 3,5 v zero gate voltage drain current i dss v ds =500v t ch =25c 10 500 a v gs =0v t ch =125c 0,2 1,0 ma gate source leakage current i gss v gs =30v v ds =0v 10 100 na drain source on-state resistance r ds(on) i d =2,5a v gs =10v 1,2 1,6 w forward transconductance g fs i d =2,5a v ds =25v 2 4 s input capacitance c iss v ds =25v 1000 1500 pf output capacitance c oss v gs =0v 85 130 pf reverse transfer capacitance c rss f=1mhz 20 30 pf turn-on-time t on ( t on =t d(on) +t r ) t d(on) v cc =300v 20 30 ns t r i d =5a 15 25 ns turn-off-time t off (t on =t d(off) +t f ) t d(off) v gs =10v 45 70 ns t f r gs =10 w 20 30 ns avalanche capability i av l=100h t ch =25c 5 a continous reverse drain current i dr 5 a pulsed reverse drain current i drm 20 a diode forward on-voltage v sd i f =2xi dr v gs =0v t ch =25c 1,1 1,65 v reverse recovery time t rr i f =i dr v gs =0v 400 ns reverse recovery charge q rr -di f /d t =100a/s t ch =25c 2 c - thermal characteristics item symbol test conditions min. typ. max. unit thermal resistance r th(ch-a) channel to air 62,5 c/w r th(ch-c) channel to case 3,125 c/w collmer semiconductor, inc. - p.o. box 702708 - dallas, tx - 75370 - 972-233-1589 - fax 972-233-0481 - http://www.collmer.com
n-channel mos-fet 2sk2022-01m 500v 1,6w 5a 40w fap-iia series > characteristics typical output characteristics drain-source-on-state resistance vs. t ch typical transfer characteristics - 1 - 2 - 3 i d [a] r ds(on) [ w ] i d [a] v ds [v] ? t ch [c] ? v gs [v] ? typical drain-source-on-state-resistance vs. i d typical forward transconductance vs. i d gate threshold voltage vs. t ch - 4 - 5 - 6 r ds(on) [ w ] g fs [s] v gs(th) [v] i d [a] ? i d [a] ? t ch [c] ? typical capacitance vs. v ds typical input charge forward characteristics of reverse diode - 7 - 8 - - 9 c [nf] v ds [v] v gs [v] i f [a] v ds [v] ? q g [nc] ? v sd [v] ? allowable power dissipation vs. t c safe operation area - z th(ch-c) [k/w] transient thermal impedance - 10 - 12 11 p d [w] i d [a] t c [c] ? v ds [v] ? t [s] ? this specification is subject to change without notice!
|
